Defects in semiconductors
  1. Photoluminescence studies of heat treated GaP:S samples
    T. Monteiro, E. Pereira, F. Domínguez-Adame, and J. Piqueras
    Journal of Electrochemical Society 140, 3627 (1993).
  2. Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence
    A. Cremades, F. Domínguez-Adame, and J. Piqueras
    Journal of Applied Physics 74, 5726 (1993).
  3. Cathodoluminescence and micro-Raman analysis of oxygen loss in electron irradiated YBa2Cu3O7-x
    P. Gómez, J. Jiménez, P. Martín, J. Piqueras and F. Domínguez-Adame
    Journal of Applied Physics 74, 6289 (1993).
  4. Scanning electron acoustic microscopy of Bi2Sr2CaCu2Ox
    F. Domínguez-Adame, P. Fernández, and J. Piqueras
    Solid State Communications 87, 843 (1993).
  5. Detection of oxygen depleted zones zones in YBa2Cu3O7-x by luminescence
    A. Remón, J. A. García, P. Gómez, F. Domínguez-Adame, and J. Piqueras
    physica status solidi (a) 136, K127 (1993).
  6. Donor concentration dependence of GaP luminescence
    T. Monteiro, E. Pereira, F. Domínguez-Adame, and J. Piqueras
    Materials Science Forum 117-118, 375 (1993).
  7. Spatial distribution of Mn related emission in GaP studied by cathodoluminescence and photoluminescence
    J. Piqueras, F. Domínguez-Adame, T. Monteiro, and E. Pereira
    Materials Chemistry and Physics 35, 126 (1993).
  8. Luminescence from Bi2Sr2CaCu2Ox and YBa2Cu3O7-x films in the scanning electron microscope
    F. Domínguez-Adame, P. Fernández, J. Piqueras, P. Prieto, C. Barrero, and M. E. Gómez
    Journal of Applied Physics 71, 2778 (1992).
  9. Study of radiative transitions in the range 1.05-2.01 eV in GaP
    J. A. García, A. Remón, F. Domínguez-Adame, and J. Piqueras
    Materials Chemistry and Physics 28, 267 (1991).
  10. Local distribution of deep centers in GaP studied by infrared cathodoluminescence
    F. Domínguez-Adame, J. Piqueras, and P. Fernández
    Applied Physics Letters 58, 257 (1991).
  11. Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
    F. Domínguez-Adame and J. Piqueras
    Journal of Applied Physics 69, 502 (1991).
  12. Composition dependence of cathodoluminescence emission of AlxGa1-xP
    P. Fernandez, F. Domínguez-Adame, J. Piqueras, and G. Armelles
    Solid State Communications 76, 195 (1990).
  13. Scanning electron acoustic microscopy observations of twins and grain boundaries in III-V materials
    F. Domínguez-Adame and J. Piqueras
    Journal of Applied Physics 66, 2751 (1989).
  14. Composite character of the red band emission in LEC GaP:S
    F. Domínguez-Adame, and J. Piqueras
    Materials Chemistry and Physics 21, 539 (1989).
  15. Influence of vacancy defects on the luminiescence of GaP studied by CL and positrons
    F. Domínguez-Adame, J. Piqueras, N. de Diego, and P. Moser
    Solid State Communications 67, 665 (1988).
  16. SEM-CL of reaction bonded SiC
    J. Piqueras, F. Domínguez-Adame, and B. Méndez
    physica status solidi (a) 108, K81 (1988).
  17. Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence
    B. Méndez, J. Piqueras, F. Domínguez-Adame, and N. de Diego
    Journal of Applied Physics 64, 4466 (1988).
  18. Spatial distribution of vacancy defects in GaP wafers
    F. Domínguez-Adame, J. Piqueras, N. de Diego, and J. LLopis
    Journal of Applied Physics 63, 2583 (1988).