In a recent paper [Nanoscale 13, 15156 (2021)], Jorge Quereda et al. identify a rapidly-responding photogating effect in monolayer MoS2 phototransistors that becomes  the dominant contribution to photoresponse under high-frequency light modulation, in contrast with previous understanding. Using a Hornbeck–Haynes model for the photocarrier dynamics, they fit the illumination power dependence of this photogating effect and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies.