Papers on defects in semiconductors
- Understanding the UV luminescence of zinc germanate: The role of native defects
J. Dolado, R. Martínez-Casado, P. Hidalgo, R. Gutierrez, A. Dianat, G. Cuniberti, F. Domínguez-Adame, E. Díaz, and B. Méndez
Acta Materialia 196, 626 (2020).
- Photoluminescence studies of heat treated GaP:S samples
T. Monteiro, E. Pereira, F. Domínguez-Adame, and J. Piqueras
Journal of Electrochemical Society 140, 3627 (1993).
- Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence
A. Cremades, F. Domínguez-Adame, and J. Piqueras
Journal of Applied Physics 74, 5726 (1993).
- Cathodoluminescence and micro-Raman analysis of oxygen loss in electron irradiated YBa2Cu3O7-x
P. Gómez, J. Jiménez, P. Martín, J. Piqueras and F. Domínguez-Adame
Journal of Applied Physics 74, 6289 (1993).
- Scanning electron acoustic microscopy of Bi2Sr2CaCu2Ox
F. Domínguez-Adame, P. Fernández, and J. Piqueras
Solid State Communications 87, 843 (1993).
- Detection of oxygen depleted zones zones in YBa2Cu3O7-x by luminescence
A. Remón, J. A. García, P. Gómez, F. Domínguez-Adame, and J. Piqueras
physica status solidi (a) 136, K127 (1993).
- Donor concentration dependence of GaP luminescence
T. Monteiro, E. Pereira, F. Domínguez-Adame, and J. Piqueras
Materials Science Forum 117-118, 375 (1993).
- Spatial distribution of Mn related emission in GaP studied by cathodoluminescence and photoluminescence
J. Piqueras, F. Domínguez-Adame, T. Monteiro, and E. Pereira
Materials Chemistry and Physics 35, 126 (1993).
- Luminescence from Bi2Sr2CaCu2Ox and YBa2Cu3O7-x films in the scanning electron microscope
F. Domínguez-Adame, P. Fernández, J. Piqueras, P. Prieto, C. Barrero, and M. E. Gómez
Journal of Applied Physics 71, 2778 (1992).
- Study of radiative transitions in the range 1.05-2.01 eV in GaP
J. A. García, A. Remón, F. Domínguez-Adame, and J. Piqueras
Materials Chemistry and Physics 28, 267 (1991).
- Local distribution of deep centers in GaP studied by infrared cathodoluminescence
F. Domínguez-Adame, J. Piqueras, and P. Fernández
Applied Physics Letters 58, 257 (1991).
- Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
F. Domínguez-Adame and J. Piqueras
Journal of Applied Physics 69, 502 (1991).
- Composition dependence of cathodoluminescence emission of AlxGa1-xP
P. Fernandez, F. Domínguez-Adame, J. Piqueras, and G. Armelles
Solid State Communications 76, 195 (1990).
- Scanning electron acoustic microscopy observations of twins and grain boundaries in III-V materials
F. Domínguez-Adame and J. Piqueras
Journal of Applied Physics 66, 2751 (1989).
- Composite character of the red band emission in LEC GaP:S
F. Domínguez-Adame, and J. Piqueras
Materials Chemistry and Physics 21, 539 (1989).
- Influence of vacancy defects on the luminiescence of GaP studied by CL and positrons
F. Domínguez-Adame, J. Piqueras, N. de Diego, and P. Moser
Solid State Communications 67, 665 (1988).
- SEM-CL of reaction bonded SiC
J. Piqueras, F. Domínguez-Adame, and B. Méndez
physica status solidi (a) 108, K81 (1988).
- Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence
B. Méndez, J. Piqueras, F. Domínguez-Adame, and N. de Diego
Journal of Applied Physics 64, 4466 (1988).
- Spatial distribution of vacancy defects in GaP wafers
F. Domínguez-Adame, J. Piqueras, N. de Diego, and J. LLopis
Journal of Applied Physics 63, 2583 (1988).
