2D QUANTUM MATERIALS
Over the last decades, artificial nanostructures grown with atomic-scale precision have become the cutting edge of materials physics. One of their salient features is the posibility of restricting the motion of the electrons to two, one or zero dimensions.
Fast response photogating in monolayer MoS2 phototransistors
D. Vaquero, V. Clericò, J. Salvador-Sánchez, E. Díaz, F. Domínguez-Adame, L. Chico, Y. M. Meziani, E. Diez and J. Quereda
Nanoscale 13, 16156 (2021)
We investigate the photoresponse of a fully h-BN encapsulated monolayer MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly-responding photogating effect mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck–Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this photogating effect and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies.
Rashba coupling and spin switching through surface states of Dirac semimetals
Y. Baba, F. Domínguez-Adame, G. Platero and R. A. Molina
New Journal of Physics 23, 023008 (2021)
We study the effect of the Rashba spin–orbit coupling on the Fermi arcs of topological Dirac semimetals. The Rashba coupling is induced by breaking the inversion symmetry at the surface. Remarkably, this coupling could be enhanced by the interaction with the substrate and controlled by an external electric field. We study analytically and numerically the rotation of the spin of the surface states as a function of the electron's momentum and the coupling strength. Furthermore, a detailed analysis of the spin-dependent two-terminal conductance is presented in the clean limit and with the addition of a random distribution of impurities. Depending on the magnitude of the quadratic terms in the Hamiltonian, the spin-flip conductance may become dominant, thus showing the potential of the system for spintronic applications, since the effect is robust even in the presence of disorder..
Excitons, trions and Rydberg states in monolayer MoS2 revealed by ...
D. Vaquero, V. Clericò, J. Salvador-Sánchez, A. Martín-Ramos, F. Domínguez-Adame, Y. M. Meziani, E. Diez and J. Quereda
Communications Physics 33, 194 (2020)
Exciton physics in two-dimensional semiconductors are typically studied by photoluminescence spectroscopy. However, this technique does not allow for direct observation of non-radiating excitonic transitions. Here, we use low-temperature photocurrent spectroscopy as an alternative technique to investigate excitonic transitions in a high-quality monolayer MoS2 phototransistor. The resulting spectra presents excitonic peaks with linewidths as low as 8 meV. We identify spectral features corresponding to the ground states of neutral excitons (XA1s and XB1s) and charged trions (TA and TB) as well as up to eight additional spectral lines at energies above the XB1s transition, which we attribute to the Rydberg series of excited states of XA and XB. The intensities of the spectral features can be tuned by the gate and drain-source voltages. Using an effective-mass theory for excitons in two-dimensional systems we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states.
Tuning the thermoelectric reponse of silicene nanoribbons with vacancies
C. Núñez, M. Saiz-Bretín, P. A. Orellana, L. Rosales and F. Domínguez-Adame
Journal of Physics: Condensed Matter 32, 275301 (2020)
In this work, we present a thorough study of the thermoelectric properties of silicene nanoribbons in the presence of a random distribution of atomic vacancies. By using a linear approach within the Landauer formalism, we calculate phonon and electron thermal conductances, the electric conductance, the Seebeck coefficient and the figure of merit of the nanoribbons. We found a sizable reduction of the phonon thermal conductance as a function of the vacancy concentration over a wide range of temperature. At the same time, the electric properties are not severely deteriorated, leading to an overall remarkable thermoelectric efficiency. We conclude that the incorporation of vacancies paves the way for designing better and more efficient nanoscale thermoelectric devices.
Electric field manipulation of surface states in topological semimetals
Y. Baba, A. Fernández-Díaz, E. Díaz, F. Domínguez-Adame and R. A. Molina
Physical Review B 100, 165105 (2019)
We investigate the consequences of applying electric fields perpendicularly to thin films of topological semimetals. In particular, we consider Weyl and Dirac semimetals in a configuration such that their surface Fermi arcs lie on opposite edges of the films. We develop an analytical approach based on perturbation theory and a single-surface approximation and we compare our analytical results with numerical calculations. The effect of the electric field on the dispersion is twofold: It shifts the dispersion relation and renormalizes the Fermi velocity, which would, in turn, have direct effects on quantum transport measurements. Additionally, it modifies the spatial decay properties of surface states which will impact the connection of the Fermi arcs in opposite sides of a narrow thin.
Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene
V. Clericò, J. A. Delgado-Notario, M. Saiz-Bretín, A. V. Malyshev, Y. M. Meziani, P. Hidalgo, B. Méndez, M. Amado, F. Domínguez-Adame and E. Diez
Scientific Reports 9, 13572 (2019)
We report on a novel implementation of the cryo-etching method, which enabled us to fabricate low-roughness hBN-encapsulated graphene nanoconstrictions with unprecedented control of the structure edges; the typical edge roughness is on the order of a few nanometers. We characterized the system by atomic force microscopy and used the measured parameters of the edge geometry in numerical simulations of the system conductance, which agree quantitatively with our low temperature transport measurements. The quality of our devices is confirmed by the observation of well defined quantized 2e2/h conductance steps at zero magnetic field. To the best of our knowledge, such an observation reports the clearest conductance quantization in physically etched graphene nanoconstrictions. The fabrication of such high quality systems and the scalability of the cryo-etching method opens a novel promising possibility of producing more complex truly-ballistic devices based on graphene.
Topologically protected states in δ-doped junctions with band inversion
A. Díaz-Fernández, N. del Valle, E. Díaz and F. Domínguez-Adame
Physical Review B98, 085424 (2021)
A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in isolating their response from that of the bulk. In this work, we propose to deposit a δ layer of donor impurities in close proximity to a topological boundary to help in detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results help us to understand the interplay of surface and bulk states in topological insulators.
Robust midgap states in band-inverted junctions under electric and magnetic fields
A. Díaz-Fernández, N. del Valle and F. Domínguez-Adame
Beilstein Journal of Nanotechnology 9, 1405 (2018)
Several IV–VI semiconductor compounds made of heavy atoms may undergo band-inversion at the L point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological invariant. In the framework of the k·p theory, band-inversion can be viewed as a change of sign of the fundamental gap. A two-band model within the envelope-function approximation predicts the appearance of midgap interface states with Dirac cone dispersions in band-inverted junctions, namely, when the gap changes sign along the growth direction. We present a thorough study of these interface electron states in the presence of crossed electric and magnetic fields, the electric field being applied along the growth direction of a band-inverted junction. We show that the Dirac cone is robust and persists even if the fields are strong. In addition, we point out that Landau levels of electron states lying in the semiconductor bands can be tailored by the electric field. Tunable devices are thus likely to be realizable, exploiting the properties studied herein.